10v drive nch mosfet R6010ANX ? structure ? dimensions (unit : mm) silicon n-channel mosfet ? features 1) low on-resistance. 2) fast switching speed. 3) gate-source voltage (v gss ) guaranteed to be 30v. 4) drive circuits can be simple. 5) parallel use is easy. ? application switching ? packaging specifications ? inner circuit package bulk code - basic ordering unit (pieces) 500 R6010ANX ? ? absolute maximum ratings (ta = 25 ? c) symbol limits unit drain-source voltage v dss 600 v gate-source voltage v gss ? 30 v continuous i d ? 10 a i dp ? 40 a continuous i s 10 a i sp 40 a avalanche current i as 5a avalanche energy e as 6.5 mj power dissipation p d 50 w channel temperature tch 150 ? c range of storage temperature tstg ? 55 to ? 150 ? c *1 pw ? 10 ? s, duty cycle ? 1% *2 l 500 ? h, v dd =50v, r g =25 ? , starting, t ch =25 ? c *3 limited only by maximum temperature allowed. *4 t c =25 ? c ? thermal resistance symbol limits unit channel to case rth (ch-c) 2.5 ? c / w pulsed parameter type source current (body diode) drain current parameter pulsed (1) gate (2) drain (3) source ? 1 body diode *4 *2 *2 *3 *1 *3 *1 to-220fm 4.5 2.8 0.75 3.2 ( 2 )( 3 )( 1 ) 0.8 2.54 2.6 2.54 1.3 1.2 14.0 12.0 8.02.5 10.0 15.0 (1) (3) (2) ?1 (1) gate (2) drain (3) source 1/6 2011.10 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
R6010ANX ? electrical characteristics (ta = 25 ? c) symbol min. typ. max. unit gate-source leakage i gss -- ? 100 na v gs = ? 30v, v ds =0v drain-source breakdown voltage v (br)dss 600 - - v i d =1ma, v gs =0v zero gate voltage drain current i dss - - 100 ? av ds =600v, v gs =0v gate threshold voltage v gs (th) 2.5 - 4.5 v v ds =10v, i d =1ma forward transfer admittance l y fs l 3.0 - - s i d =5a, v ds =10v input capacitance c iss - 1050 - pf v ds =25v output capacitance c oss - 720 - pf v gs =0v reverse transfer capacitance c rss - 35 - pf f=1mhz turn-on delay time t d(on) - 25 - ns v dd 300v, i d =5a rise time t r - 30 - ns v gs =10v turn-off delay time t d(off) - 70 - ns r l =60 ? fall time t f - 30 - ns r g =10 ? total gate charge q g - 25 - nc v dd 300v, i d =10a gate-source charge q gs -5-ncv gs =10v gate-drain charge q gd -12-nc *pulsed ? body diode characteristics (source-drain) symbol min. typ. max. unit forward voltage v sd - - 1.5 v i s =10a, v gs =0v *pulsed 0.43 0.56 parameter conditions conditions ? parameter static drain-source on-state resistance r ds (on) i d =5a, v gs =10v - * * * * * * * * * * 2/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6010ANX ? electrical characteristic curves (ta=25 ? c) 0 1 2 3 0 0.2 0.4 0.6 0.8 1 drain current : i d [a] drain - source voltage : v ds [v] fig.1 typical output characteristics ( ) v gs = 10.0 v v gs =6.0v v gs =7.0v v gs =4.0v v gs =5.0v t a =25 c pulsed 0 2 4 6 8 10 0 2 4 6 8 10 drain current : i d [a] drain - source voltage : v ds [v] fig.2 typical output characteristics ( ) v gs =10.0v v gs =6.0v v gs =5.0v v gs =4.0v v gs =7.0v t a =25 c pulsed 0.001 0.01 0.1 1 10 100 0 1 2 3 4 5 6 7 8 9 10 drain currnt : i d [a] gate - source voltage : v gs [v] fig.3 typical transfer characteristics v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 1 2 3 4 5 -50 -25 0 25 50 75 100 125 150 gate threshold voltage : v gs (th) [v] channel temperature : tch [ ] fig.4 gate threshold voltage vs. channel temperature v ds =10v i d =1ma pulsed 0.01 0.1 1 10 0.1 1 10 100 static drain - source on - state resistance r ds (on) [ w ] drain current : i d [a] fig.5 static drain - source on - state resistance vs. drain current v gs =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0 0.2 0.4 0.6 0.8 1 1.2 -50 -25 0 25 50 75 100 125 150 static drain - source on - state resistance r ds (on) [ w ] channel temperature : t ch [ ] fig.6 static drain - source on - state resistance vs. channel temperature v gs =10v pulsed i d =5a i d =10a 3/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6010ANX 0.1 1 10 100 0.01 0.1 1 10 100 forward transfer admittance y fs [s] drain current : i d [a] fig.7 forward transfer admittance vs. drain current v ds =10v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.01 0.1 1 10 100 0.0 0.5 1.0 1.5 source current : is [a] source - drain voltage : v sd [v] fig.8 source current vs. source - drain voltage v gs =0v pulsed t a =125 c t a =75 c t a =25 c t a = - 25 c 0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 12 14 16 18 20 static drain - source on - state resistance r ds(on) [ w ] gate - source voltage : v gs [v] fig.9 static drain - source on - state resistance vs. gate - source voltage i d =5a i d =10a t a =25 c pulsed 1 10 100 1000 10000 0.01 0.1 1 10 100 switching time : t [ns] drain current : i d [a] fig.10 switching characteristics t d(on) t r t d(off) t f v dd P 300v v gs =10v r g =10 t a =25 c pulsed 0 2 4 6 8 10 0 5 10 15 20 25 gate - source voltage : v gs [v] total gate charge : q g [nc] fig.11 dynamic input characteristics t a =25 c v dd =300v i d =10a pulsed 1 10 100 1000 10000 100000 0.01 0.1 1 10 100 1000 10000 capacitance : c [pf] drain - source voltage : v ds [v] fig.12 typical capacitance vs. drain - source voltage t a =25 c f=1mhz v gs =0v c iss c oss c rss 4/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6010ANX 10 100 1000 0 1 10 100 reverse recovery time : trr [ns] source current : i s [a] fig.13 reverse recovery time vs. source current t a =25 c v gs =0v di/dt=100a/us pulsed 0.01 0.1 1 10 100 0.1 1 10 100 1000 drain current : i d [ a ] drain - source voltage : v ds [ v ] fig.14 maximum safe operating area t a =25 c single pulse operation in this area is limited by r ds(on) (v gs = 10v) p w = 100 s p w = 1ms p w = 10ms 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized transient thermal resistance : r t pulse width : pw (s) t a =25 c single pulse rth (ch - a) =52.3 c /w rth (ch - a) (t)=r(t) rth(ch - a) fig.15 normalized transient thermal resistance v.s. pulse width 5/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
R6010ANX ? measurement circuits f ig.1-1 switching time measurement circu it v gs r g v ds d.u.t. i d r l v dd fig.1-2 switching waveforms 90% 90% 90 % 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) fig.2-2 gate charge waveform v g v gs charge q g q gs q gd fig.3-1 avalanche measurement circuit v gs r g v ds d.u.t. i as l v dd fig.3-2 avalanche waveform i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 1 2 f ig.2-1 gate charge measurement circuit v gs i g(const.) r g v d s d.u.t. i d r l v dd 6/6 2011.10 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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